Technical Data Sheet
5mm Infrared LED, T-1 3/4
SIR383C
Features
? High reliability
? 2.54mm lead spacing
? Low forward voltage
? Good spectral matching
to Si photodetector
? Pb free
? The product itself will remain within RoHS compliant version.
Descriptions
? EVERLIGHT’S Infrared Emitting Diode(SIR383C)
is a high intensity diode , molded in a water clear plastic
package.
? The device is spectrally matched with phototransistor , photodiode
and infrared receiver module.
Applications
? Free air transmission system
? Optoelectronic switch
? Floppy disk drive
? Infrared applied system
? Smoke detector
Device Selection Guide
LED Part No.
SIR
Chip
Material
GaAlAs
Lens Color
Water clear
Everlight Electronics Co., Ltd.
http:\\www.everlight.com
Rev 2
Page: 1 of 7
Device No : DIS-038-004
Prepared date : 08-22-2005
Prepared by : JAINE TSAI
相关PDF资料
SIR383 LED IR 5MM BLUE WATER CLEAR AXL
SIR404DP-T1-GE3 MOSFET N-CH D-S 20V 8-SOIC
SIR406DP-T1-GE3 MOSFET N-CH D-S 25V PPAK 8SOIC
SIR414DP-T1-GE3 MOSFET N-CH D-S 40V 8-SOIC
SIR418DP-T1-GE3 MOSFET N-CH D-S 40V PPAK 8SOIC
SIR436DP-T1-GE3 MOSFET N-CH D-S 25V PPAK 8SOIC
SIR440DP-T1-GE3 MOSFET N-CH 20V 60A PPAK 8SOIC
SIR462DP-T1-GE3 MOSFET N-CH 30V 30A PPAK 8SOIC
相关代理商/技术参数
SIR-38EH 制造商:Russell 功能描述:
SIR401DP-T1-GE3 功能描述:MOSFET -20V 3.2mOhm@10V 50A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR402DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SIR402DP_09 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SiR402DP-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8 制造商:Vishay Intertechnologies 功能描述:MOSFET, N, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:30V, On Resistance Rds(on):6mohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:4.2W, Operating Temperature Range:-55C to, RoHS Compliant: Yes
SIR402DP-T1-GE3 功能描述:MOSFET 30V 35A 36W 6.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR403EDP-T1-GE3 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET P-CH 30V 40A SO08 制造商:Vishay Intertechnologies 功能描述:P-CHANNEL 30-V (D-S) MOSFET
SIR404DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET